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2SAR567F3TR ROHM Semiconductor
*For representation only.

2SAR567F3TR

Bipolar Transistors - BJT 120V 2.5A DF2020 BJT PNP TRA
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 2.5 A
Voltage - Collector Emitter Breakdown (Max) 120 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 5V
Power - Max 1 W
Frequency - Transition 220MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 3-UDFN Exposed Pad
Supplier Device Package HUML2020L3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
516
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 91 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290055
TARIC 8541290000
ECCN EAR99
Product Overview

The 2SAR567F3TR from ROHM Semiconductor falls under the transistors category. Notable characteristics of this part include a transistor type of PNP, a current, collector (ic) of 2.5 A, a voltage, collector emitter breakdown of 120 V, a vce saturation (max) @ ib, ic of 200mV @ 80mA, 800mA, a current, collector cutoff of 1µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 120 @ 100mA, 5V. This part has a typical lead time of 91 Days from factory. Order 2SAR567F3TR from Simplytronix for authenticated stock and same-day order processing.

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