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2SCR579D3TLQ
ROHM Semiconductor
Active
Bipolar Transistors - BJT 2SCR579D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 5V |
| Power - Max | 10 W |
| Frequency - Transition | 101MHz |
| Operating Temperature | 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 |
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Product Attributes
| Packaging | |
| Standard Pack Qty |
5,052
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | |
| Lifecycle | |
| Lead Time | (from factory) |
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Documentation
Datasheet not available
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Product Overview
ROHM Semiconductor's 2SCR579D3TLQ is a widely used transistors in electronic designs. It features a transistor type of NPN, a current, collector (ic) of 1.5 A, a voltage, collector emitter breakdown of 160 V, a vce saturation (max) @ ib, ic of 400mV @ 100mA, 1A, a current, collector cutoff of 1µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 120 @ 100mA, 5V. Order 2SCR579D3TLQ from Simplytronix for authenticated stock and same-day order processing.
