*For representation only.
2SCR543RHZGTL
ROHM Semiconductor
Active
Bipolar Transistors - BJT NPN, SOT-346T, 50V 3A, Driver Transistor
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 3V |
| Power - Max | 500 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SC-96 |
| Supplier Device Package | TSMT3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
6,416
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
2SCR543RHZGTL is a transistors manufactured by ROHM Semiconductor. Key specifications include a transistor type of NPN, a current, collector (ic) of 3 A, a voltage, collector emitter breakdown of 50 V, a vce saturation (max) @ ib, ic of 350mV @ 100mA, 2A, a current, collector cutoff of 1µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 180 @ 100mA, 3V. This part has a typical lead time of 112 Days from factory. You can source 2SCR543RHZGTL through Simplytronix, with fast shipping and verified authenticity.
