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UJ4C075044K3S

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SiC MOSFETs 750V/44MOSICFETG4TO247
Technical Specifications
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 750 V
Current - Continuous Drain (Id) @ 25°C 37.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 56mOhm @ 25A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 37.8 nC @ 15 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 400 V
FET Feature -
Power Dissipation (Max) 203W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Product Attributes
Packaging Tube
Standard Pack Qty600
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,010
In Stock
Packaging: Tube
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySiC MOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 217 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

UJ4C075044K3S by onsemi is a sic mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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