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UJ4C075023B7S

SiC MOSFETs 750V/23MOSICFETG4TO263-7
Technical Specifications
FET Type N-Channel
Technology SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss) 750 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 29mOhm @ 40A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 37.8 nC @ 15 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 400 V
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Product Attributes
Packaging Reel
Standard Pack Qty800
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,212
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySiC MOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 168 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
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