| Transistor Type | 1 NPN, 1 PNP |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 150mW |
| Frequency - Transition | 300MHz, 250MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 308 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
SMBT3946DW1T1G is a bipolar transistors - bjt manufactured by onsemi. Key specifications include a transistor type of 1 NPN, 1 PNP, a current, collector (ic) of 200mA, a voltage, collector emitter breakdown of 40V, a vce saturation (max) @ ib, ic of 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, a current, collector cutoff of - and a DC current gain (hfe) (min) @ ic, vce of 100 @ 10mA, 1V. This part has a typical lead time of 308 Days from factory and ships with a full manufacturer datasheet available for download. You can source SMBT3946DW1T1G through Simplytronix, with fast shipping and verified authenticity.