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SMBT3946DW1T1G onsemi
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SMBT3946DW1T1G

Bipolar Transistors - BJT SS GP XSTR DUAL 40V
Technical Specifications
Transistor Type 1 NPN, 1 PNP
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 150mW
Frequency - Transition 300MHz, 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,879
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 308 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210075
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

SMBT3946DW1T1G is a bipolar transistors - bjt manufactured by onsemi. Key specifications include a transistor type of 1 NPN, 1 PNP, a current, collector (ic) of 200mA, a voltage, collector emitter breakdown of 40V, a vce saturation (max) @ ib, ic of 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA, a current, collector cutoff of - and a DC current gain (hfe) (min) @ ic, vce of 100 @ 10mA, 1V. This part has a typical lead time of 308 Days from factory and ships with a full manufacturer datasheet available for download. You can source SMBT3946DW1T1G through Simplytronix, with fast shipping and verified authenticity.

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