*For representation only.
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Technical Specifications
| Transistor Type | 2 NPN |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Power - Max | 200mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
3,260
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 301 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by onsemi, the NSVT5551DW1T1G is classified as a bipolar transistors - bjt. Notable characteristics of this part include a transistor type of 2 NPN, a current, collector (ic) of 200mA, a voltage, collector emitter breakdown of 160V, a vce saturation (max) @ ib, ic of 200mV @ 5mA, 50mA, a current, collector cutoff of 50nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 80 @ 10mA, 5V. This part has a typical lead time of 301 Days from factory. Order NSVT5551DW1T1G from Simplytronix for authenticated stock and same-day order processing.
