*For representation only.
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Technical Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 5V |
| Power - Max | 800 mW |
| Frequency - Transition | 87MHz |
| Operating Temperature | 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Supplier Device Package | 8-LFPAK |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
4,844
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 364 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by onsemi, the NSVT1601CLTWG is classified as a bipolar transistors - bjt. Notable characteristics of this part include a transistor type of PNP, a current, collector (ic) of 1.5 A, a voltage, collector emitter breakdown of 160 V, a vce saturation (max) @ ib, ic of 200mV @ 50mA, 500mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 140 @ 100mA, 5V. This part has a typical lead time of 364 Days from factory. Order NSVT1601CLTWG from Simplytronix for authenticated stock and same-day order processing.
