*For representation only.
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Technical Specifications
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Power - Max | 380mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
12,662
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
Manufactured by onsemi, the SBC857BDW1T1G is classified as a bipolar transistors - bjt. Notable characteristics of this part include a transistor type of 2 PNP (Dual), a current, collector (ic) of 100mA, a voltage, collector emitter breakdown of 45V, a vce saturation (max) @ ib, ic of 650mV @ 5mA, 100mA, a current, collector cutoff of 15nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 220 @ 2mA, 5V. This part has a typical lead time of 294 Days from factory. You can source SBC857BDW1T1G through Simplytronix, with fast shipping and verified authenticity.
