*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta), 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 38µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 50V |
| Power - Max | 3.1W (Ta), 46W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1500 |
4,027
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 308 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The NVMFWD027N10MCLT1G from onsemi falls under the mosfets category. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 100V, a current, continuous drain (id) @ 25°C of 7.4A (Ta), 28A (Tc) and a rds on (max) @ id, vgs of 26mOhm @ 7A, 10V. This part has a typical lead time of 308 Days from factory. Simplytronix carries NVMFWD027N10MCLT1G in stock, backed by a genuine parts guarantee and quick dispatch.
