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BSS123LT1G onsemi
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BSS123LT1G

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MOSFETs 100V 170mA N-Channel
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 20 pF @ 25 V
FET Feature -
Power Dissipation (Max) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,187
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 364 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

onsemi's BSS123LT1G is a widely used mosfets in electronic designs. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 170mA (Ta), a drive voltage of 10V and a rds on (max) @ id, vgs of 6Ohm @ 100mA, 10V. This part has a typical lead time of 364 Days from factory. Simplytronix stocks BSS123LT1G for same-day shipping with genuine parts guaranteed.

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