| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 130mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 100mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 5 V |
| FET Feature | - |
| Power Dissipation (Max) | 225mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | BSS84LT7G |
| Suggested Replacement |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 301 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
The BSS84LT1G from onsemi falls under the mosfets category. Key specifications include a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 50 V, a current, continuous drain (id) @ 25°C of 130mA (Ta), a drive voltage of 5V and a rds on (max) @ id, vgs of 10Ohm @ 100mA, 5V. This part has a typical lead time of 301 Days from factory. Order BSS84LT1G from Simplytronix for authenticated stock and same-day order processing.