*For representation only.
⚙
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 13µA |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| Power - Max | 3.2W (Ta), 24W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1500 |
11,603
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 105 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
The NVMFD5C680NLET1G from onsemi falls under the mosfets category. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel, a FET feature of -, a drain to source voltage of 60V, a current, continuous drain (id) @ 25°C of 7.4A (Ta), 20A (Tc) and a rds on (max) @ id, vgs of 28mOhm @ 5A, 10V. This part has a typical lead time of 105 Days from factory. Simplytronix stocks NVMFD5C680NLET1G for same-day shipping with genuine parts guaranteed.
