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NVLJWS013N03CLTAG onsemi
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NVLJWS013N03CLTAG

onsemi Active
MOSFETs T6 30V LL 2X2 WDFNW6
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 27W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 6-WDFNW (2.05x2.05)
Package / Case 6-PowerWDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,801
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 266 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by onsemi, the NVLJWS013N03CLTAG is classified as a mosfets. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V, a current, continuous drain (id) @ 25°C of 10A (Ta), 35A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 13mOhm @ 8A, 10V. This part has a typical lead time of 266 Days from factory. Order NVLJWS013N03CLTAG from Simplytronix for authenticated stock and same-day order processing.

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