*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V, 25V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 340µA, 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 9nC, 30nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 15V, 5050pF @ 13V |
| Power - Max | 960mW (Ta), 1.04W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PQFN (5x6) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | NTMFD1D1N02X |
3,482
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 365 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
NTMFD0D9N02P1E is a mosfets manufactured by onsemi. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual) Asymmetrical, a FET feature of -, a drain to source voltage of 30V, 25V, a current, continuous drain (id) @ 25°C of 14A (Ta), 30A (Ta) and a rds on (max) @ id, vgs of 3mOhm @ 20A, 10V, 0.72mOhm @ 41A, 10V. This part has a typical lead time of 365 Days from factory. Order NTMFD0D9N02P1E from Simplytronix for authenticated stock and same-day order processing.
