*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 295mA |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 26pF @ 20V |
| Power - Max | 250mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
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Alternate / Replacement Parts
| Alternate Packaging | NTJD5121NT2G |
| Suggested Replacement |
12,619
Units In Stock
📦 Reel
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- Global shipping
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Test report available upon request —
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 301 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
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Product Overview
Manufactured by onsemi, the NTJD5121NT1G is classified as a mosfets. Key specifications include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, a drain to source voltage of 60V, a current, continuous drain (id) @ 25°C of 295mA and a rds on (max) @ id, vgs of 1.6Ohm @ 500mA, 10V. This part has a typical lead time of 301 Days from factory. Order NTJD5121NT1G from Simplytronix for authenticated stock and same-day order processing.
