Similar Products
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 120 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 250mW |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Digital Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
onsemi's NSVTB60BDW1T1G is a widely used transistors in electronic designs. It features a transistor type of 1 NPN Pre-Biased, 1 PNP, a current, collector (ic) of 150mA, a voltage, collector emitter breakdown of 50V, a resistor, base of 22kOhms, a resistor, emitter base of 47kOhms and a DC current gain (hfe) (min) @ ic, vce of 80 @ 5mA, 10V / 120 @ 5mA, 10V. This part has a typical lead time of 294 Days from factory. Simplytronix stocks NSVTB60BDW1T1G for same-day shipping with genuine parts guaranteed.
