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BSS64LT1G onsemi
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BSS64LT1G

onsemi Active
Bipolar Transistors - BJT 100mA 120V NPN
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 15mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA, 1V
Power - Max 225 mW
Frequency - Transition 60MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,147
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 287 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Product Overview

The BSS64LT1G from onsemi falls under the transistors category. This component is defined by a transistor type of NPN, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 80 V, a vce saturation (max) @ ib, ic of 200mV @ 15mA, 50mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 20 @ 10mA, 1V. This part has a typical lead time of 287 Days from factory. Simplytronix carries BSS64LT1G in stock, backed by a genuine parts guarantee and quick dispatch.

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