*For representation only.
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Technical Specifications
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistors Included | R1 and R2 |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 450 mW |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 3-XFDFN |
| Supplier Device Package | 3-XDFNW (1x1) |
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Product Attributes
| Packaging | |
| Standard Pack Qty |
3,915
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Digital Transistors |
| RoHS | |
| Lifecycle | |
| Lead Time | (from factory) |
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Documentation
Datasheet not available
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Product Overview
NSBA114EMXWTBG is a transistors manufactured by onsemi. This component is defined by a transistor type of PNP - Pre-Biased, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 50 V, a resistors included of R1 and R2, a resistor, base of 10 kOhms and a resistor, emitter base of 10 kOhms. Order NSBA114EMXWTBG from Simplytronix for authenticated stock and same-day order processing.
