Similar Products
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistors Included | R1 and R2 |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 202 mW |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | SC-70-3 (SOT323) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Digital Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 217 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8542399000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
The NSVMUN5131T1G from onsemi falls under the transistors category. Notable characteristics of this part include a transistor type of PNP - Pre-Biased, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 50 V, a resistors included of R1 and R2, a resistor, base of 2.2 kOhms and a resistor, emitter base of 2.2 kOhms. This part has a typical lead time of 217 Days from factory. You can source NSVMUN5131T1G through Simplytronix, with fast shipping and verified authenticity.
