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NSVMSD42WT1G

onsemi Active
Bipolar Transistors - BJT SS SC70 HV XSTR NPN 300V
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 150 mA
Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V
Power - Max 450 mW
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
1,884
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 287 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

onsemi's NSVMSD42WT1G is a widely used transistors in electronic designs. This component is defined by a transistor type of NPN, a current, collector (ic) of 150 mA, a voltage, collector emitter breakdown of 300 V, a vce saturation (max) @ ib, ic of 500mV @ 2mA, 20mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 40 @ 30mA, 10V. This part has a typical lead time of 287 Days from factory. Simplytronix stocks NSVMSD42WT1G for same-day shipping with genuine parts guaranteed.

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