*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Power - Max | 225 mW |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
9,582
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 70 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
NSVMMBT5550LT1G is a transistors manufactured by onsemi. Key specifications include a transistor type of NPN, a current, collector (ic) of 600 mA, a voltage, collector emitter breakdown of 140 V, a vce saturation (max) @ ib, ic of 250mV @ 5mA, 50mA, a current, collector cutoff of 100nA and a DC current gain (hfe) (min) @ ic, vce of 60 @ 10mA, 5V. This part has a typical lead time of 70 Days from factory. Simplytronix stocks NSVMMBT5550LT1G for same-day shipping with genuine parts guaranteed.
