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NSVF5488SKT3G onsemi
*For representation only.

NSVF5488SKT3G

RF Bipolar Transistors BIP NPN 70MA 10V F
Technical Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 10V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1dB @ 1GHz
Gain 12dB
Power - Max 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 20mA, 5V
Current - Collector (Ic) (Max) 70mA
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case SOT-623F
Supplier Device Package SOT-623/SSFP
📦 Product Attributes
Packaging Reel
Standard Pack Qty 8000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,108
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle Factory Special Order
Lead Time 365 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
USHTS 8541210095
ECCN EAR99
Product Overview

The NSVF5488SKT3G from onsemi falls under the transistors category. It features a transistor type of NPN, a voltage, collector emitter breakdown of 10V, a frequency, transition of 7GHz, a noise figure of 1dB @ 1GHz, a gain of 12dB and a power, max of 100mW. This part has a typical lead time of 365 Days from factory. You can source NSVF5488SKT3G through Simplytronix, with fast shipping and verified authenticity.

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