*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Gain | 17dB |
| Power - Max | 450mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, Flat Leads |
| Supplier Device Package | SC-82FL/MCPH4 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
10,422
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 364 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
NSVF4015SG4T1G is a transistors manufactured by onsemi. Notable characteristics of this part include a transistor type of NPN, a voltage, collector emitter breakdown of 12V, a frequency, transition of 10GHz, a noise figure of 1.2dB @ 1GHz, a gain of 17dB and a power, max of 450mW. This part has a typical lead time of 364 Days from factory. Order NSVF4015SG4T1G from Simplytronix for authenticated stock and same-day order processing.
