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NSVF4009SG4T1G

RF Bipolar Transistors BIP NPN 40MA 3.5V FT=25G
Technical Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 3.5V
Frequency - Transition 25GHz
Noise Figure (dB Typ @ f) 1.1dB @ 2GHz
Gain 17dB
Power - Max 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 1V
Current - Collector (Ic) (Max) 40mA
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Supplier Device Package SC-82FL/MCPH4
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,486
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 56 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541100090
USHTS 8541100080
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
Product Overview

The NSVF4009SG4T1G from onsemi falls under the transistors category. This component is defined by a transistor type of NPN, a voltage, collector emitter breakdown of 3.5V, a frequency, transition of 25GHz, a noise figure of 1.1dB @ 2GHz, a gain of 17dB and a power, max of 120mW. This part has a typical lead time of 56 Days from factory. Simplytronix stocks NSVF4009SG4T1G for same-day shipping with genuine parts guaranteed.

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