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NSVDTA113EM3T5G

onsemi Active
Digital Transistors PNP DIGITAL TRANSIST
Technical Specifications
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistors Included R1 and R2
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 260 mW
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package SOT-723
📦 Product Attributes
Packaging Reel
Standard Pack Qty 8000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,760
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Digital Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 217 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541210095
TARIC 8541210000
ECCN EAR99
Product Overview

The NSVDTA113EM3T5G from onsemi falls under the transistors category. Key specifications include a transistor type of PNP - Pre-Biased, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 50 V, a resistors included of R1 and R2, a resistor, base of 1 kOhms and a resistor, emitter base of 1 kOhms. This part has a typical lead time of 217 Days from factory. Simplytronix carries NSVDTA113EM3T5G in stock, backed by a genuine parts guarantee and quick dispatch.

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