*For representation only.
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Technical Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 2.5mA, 25mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 1V |
| Power - Max | 225 mW |
| Frequency - Transition | 95MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
11,496
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
onsemi's NSVBSS63LT1G is a widely used transistors in electronic designs. Key specifications include a transistor type of PNP, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 100 V, a vce saturation (max) @ ib, ic of 250mV @ 2.5mA, 25mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 30 @ 25mA, 1V. This part has a typical lead time of 294 Days from factory. Simplytronix carries NSVBSS63LT1G in stock, backed by a genuine parts guarantee and quick dispatch.
