*For representation only.
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Technical Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Power - Max | 875 mW |
| Frequency - Transition | 130MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 3-WDFN Exposed Pad |
| Supplier Device Package | 3-WDFNW (2x2) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
13,784
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 217 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The NSVBCP5310MTWG from onsemi falls under the bipolar transistors - bjt category. Key specifications include a transistor type of PNP, a current, collector (ic) of 1 A, a voltage, collector emitter breakdown of 80 V, a vce saturation (max) @ ib, ic of 500mV @ 50mA, 500mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 63 @ 150mA, 2V. This part has a typical lead time of 217 Days from factory. You can source NSVBCP5310MTWG through Simplytronix, with fast shipping and verified authenticity.
