*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 600mA, 6A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 2V |
| Power - Max | 800 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 (TO-261) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
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Alternate / Replacement Parts
| Alternate Packaging | NSV60601MZ4T3G |
| Suggested Replacement |
10,549
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 217 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
The NSV60601MZ4T1G from onsemi falls under the transistors category. It features a transistor type of NPN, a current, collector (ic) of 6 A, a voltage, collector emitter breakdown of 60 V, a vce saturation (max) @ ib, ic of 300mV @ 600mA, 6A, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 120 @ 1A, 2V. This part has a typical lead time of 217 Days from factory. Simplytronix carries NSV60601MZ4T1G in stock, backed by a genuine parts guarantee and quick dispatch.
