*For representation only.
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Technical Specifications
| Transistor Type | 1 NPN, 1 PNP |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 115mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 1A, 2V |
| Power - Max | 653mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
7,119
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 266 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by onsemi, the NSV40302PDR2G is classified as a transistors. It features a transistor type of 1 NPN, 1 PNP, a current, collector (ic) of 3A, a voltage, collector emitter breakdown of 40V, a vce saturation (max) @ ib, ic of 115mV @ 200mA, 2A, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 180 @ 1A, 2V. This part has a typical lead time of 266 Days from factory. Order NSV40302PDR2G from Simplytronix for authenticated stock and same-day order processing.
