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NSV20201DMTWTBG onsemi
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NSV20201DMTWTBG

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Bipolar Transistors - BJT 20V DUAL LOW VCE(SA T) FOR
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Frequency - Transition -
Operating Temperature -
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Supplier Device Package 6-WDFN (2x2)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,220
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 196 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
USHTS 8541210075
TARIC 8541210000
ECCN EAR99
Product Overview

The NSV20201DMTWTBG from onsemi falls under the transistors category. It features a transistor type of NPN, a current, collector (ic) of 3 A, a voltage, collector emitter breakdown of 20 V, a vce saturation (max) @ ib, ic of -, a current, collector cutoff of - and a DC current gain (hfe) (min) @ ic, vce of -. This part has a typical lead time of 196 Days from factory. Simplytronix carries NSV20201DMTWTBG in stock, backed by a genuine parts guarantee and quick dispatch.

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