| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Supplier Device Package | 6-WDFN (2x2) |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 196 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
The NSV20201DMTWTBG from onsemi falls under the transistors category. It features a transistor type of NPN, a current, collector (ic) of 3 A, a voltage, collector emitter breakdown of 20 V, a vce saturation (max) @ ib, ic of -, a current, collector cutoff of - and a DC current gain (hfe) (min) @ ic, vce of -. This part has a typical lead time of 196 Days from factory. Simplytronix carries NSV20201DMTWTBG in stock, backed by a genuine parts guarantee and quick dispatch.