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NSV20200LT1G onsemi
*For representation only.

NSV20200LT1G

Bipolar Transistors - BJT 20V PNP LOW VCE(SAT) XTR
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 180mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA, 2V
Power - Max 460 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,639
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 294 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

The NSV20200LT1G from onsemi falls under the transistors category. This component is defined by a transistor type of PNP, a current, collector (ic) of 2 A, a voltage, collector emitter breakdown of 20 V, a vce saturation (max) @ ib, ic of 180mV @ 200mA, 2A, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 250 @ 500mA, 2V. This part has a typical lead time of 294 Days from factory. Simplytronix carries NSV20200LT1G in stock, backed by a genuine parts guarantee and quick dispatch.

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