*For representation only.
NSS1C301CTWG
onsemi
Active
Bipolar Transistors - BJT 100 V, 3.0 A Low VCE(sat) NPN Bipolar Junction Transistor 100 V, 3 A
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Power - Max | 1 W |
| Frequency - Transition | 120MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-1023, 4-LFPAK |
| Supplier Device Package | LFPAK4 (5x6) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
4,228
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 266 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
onsemi's NSS1C301CTWG is a widely used transistors in electronic designs. This component is defined by a transistor type of NPN, a current, collector (ic) of 3 A, a voltage, collector emitter breakdown of 100 V, a vce saturation (max) @ ib, ic of 250mV @ 300mA, 3A, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 200 @ 500mA, 2V. This part has a typical lead time of 266 Days from factory. Simplytronix stocks NSS1C301CTWG for same-day shipping with genuine parts guaranteed.
