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MCH4015-TL-H

onsemi Active
RF Bipolar Transistors HIGH FREQUENCY AMPLIFIER
Technical Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 10GHz
Noise Figure (dB Typ @ f) 1.2dB @ 1GHz
Gain 17dB
Power - Max 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 50mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-343F
Supplier Device Package 4-MCPH
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,816
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 364 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210075
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

Manufactured by onsemi, the MCH4015-TL-H is classified as a rf bipolar transistors. This component is defined by a transistor type of NPN, a voltage, collector emitter breakdown of 12V, a frequency, transition of 10GHz, a noise figure of 1.2dB @ 1GHz, a gain of 17dB and a power, max of 450mW. This part has a typical lead time of 364 Days from factory. Simplytronix stocks MCH4015-TL-H for same-day shipping with genuine parts guaranteed.

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