| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Dual) Asymmetrical |
| FET Feature |
- |
| Drain to Source Voltage (Vdss) |
25V |
| Current - Continuous Drain (Id) @ 25°C |
13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs |
6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V |
| Vgs(th) (Max) @ Id |
2.2V @ 250µA, 2.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
19nC @ 10V, 64nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
1240pF @ 13V, 4335pF @ 13V |
| Power - Max |
800mW (Ta), 900mW (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerWDFN |
| Supplier Device Package |
Powerclip-33 |