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FCH060N80-F155 onsemi
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FCH060N80-F155

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MOSFETs SuperFET2 800V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 4.5V @ 5.8mA
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14685 pF @ 100 V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 450
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,968
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 119 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

onsemi's FCH060N80-F155 is a widely used mosfets in electronic designs. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 800 V, a current, continuous drain (id) @ 25°C of 56A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 60mOhm @ 29A, 10V. This part has a typical lead time of 119 Days from factory. You can source FCH060N80-F155 through Simplytronix, with fast shipping and verified authenticity.

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