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EFC6601R-TR onsemi
*For representation only.

EFC6601R-TR

MOSFETs NCH+NCH 2.5V DRIVE SERIES
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss) -
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 2W
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-XFBGA, FCBGA
Supplier Device Package EFCP2718-6CE-020
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,797
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

onsemi's EFC6601R-TR is a widely used mosfets in electronic designs. This component is defined by a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, 2.5V Drive, a drain to source voltage of -, a current, continuous drain (id) @ 25°C of - and a rds on (max) @ id, vgs of -. This part has a typical lead time of 140 Days from factory and ships with a full manufacturer datasheet available for download. You can source EFC6601R-TR through Simplytronix, with fast shipping and verified authenticity.

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