*For representation only.
⚙
Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 2.5W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFBGA, WLCSP |
| Supplier Device Package | 6-WLCSP (1.77x3.05) |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
10,944
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
ℹ
Product Overview
The EFC3J018NUZTDG from onsemi falls under the mosfets category. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual) Common Drain, a FET feature of Logic Level Gate, 2.5V Drive, a drain to source voltage of 20V, a current, continuous drain (id) @ 25°C of 23A (Ta) and a rds on (max) @ id, vgs of 4.7mOhm @ 5A, 4.5V. This part has a typical lead time of 126 Days from factory. You can source EFC3J018NUZTDG through Simplytronix, with fast shipping and verified authenticity.
