*For representation only.
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 1V |
| Power - Max | 36 W |
| Frequency - Transition | 3MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 500 |
5,597
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
onsemi's BD439G is a widely used bipolar transistors - bjt in electronic designs. This component is defined by a transistor type of NPN, a current, collector (ic) of 4 A, a voltage, collector emitter breakdown of 60 V, a vce saturation (max) @ ib, ic of 800mV @ 300mA, 3A, a current, collector cutoff of 100µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 40 @ 500mA, 1V. This part has a typical lead time of 126 Days from factory. Order BD439G from Simplytronix for authenticated stock and same-day order processing.
