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BD13516STU onsemi
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BD13516STU

Bipolar Transistors - BJT NPN Epitaxial Sil
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V
Power - Max 1.25 W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1920
🔁 Alternate / Replacement Parts
Alternate Packaging BD13516S
Suggested Replacement
6,420
Units In Stock
📦 Tube
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

onsemi's BD13516STU is a widely used bipolar transistors - bjt in electronic designs. This component is defined by a transistor type of NPN, a current, collector (ic) of 1.5 A, a voltage, collector emitter breakdown of 45 V, a vce saturation (max) @ ib, ic of 500mV @ 50mA, 500mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 100 @ 150mA, 2V. This part has a typical lead time of 112 Days from factory. You can source BD13516STU through Simplytronix, with fast shipping and verified authenticity.

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