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2SD1623T-TD-E onsemi
*For representation only.

2SD1623T-TD-E

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Bipolar Transistors - BJT BIP NPN 2A 50V
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 2V
Power - Max 500 mW
Frequency - Transition 150MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PCP
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging 2SD1623S-TD-E
Suggested Replacement
2,779
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 56 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541210000
USHTS 8541290055
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

onsemi's 2SD1623T-TD-E is a widely used transistors in electronic designs. Key specifications include a transistor type of NPN, a current, collector (ic) of 2 A, a voltage, collector emitter breakdown of 50 V, a vce saturation (max) @ ib, ic of 400mV @ 50mA, 1A, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 100 @ 100mA, 2V. This part has a typical lead time of 56 Days from factory. Simplytronix carries 2SD1623T-TD-E in stock, backed by a genuine parts guarantee and quick dispatch.

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