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2SC3649S-TD-H

onsemi Obsolete
Bipolar Transistors - BJT BIP NPN 1.5A 160V
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 160 V
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V
Power - Max 500 mW
Frequency - Transition 120MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PCP
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging 2SC3649S-TD-E
Suggested Replacement
6,499
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant By Exemption
Lifecycle Obsolete
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210075
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Manufactured by onsemi, the 2SC3649S-TD-H is classified as a transistors. This component is defined by a transistor type of NPN, a current, collector (ic) of 1.5 A, a voltage, collector emitter breakdown of 160 V, a vce saturation (max) @ ib, ic of 450mV @ 50mA, 500mA, a current, collector cutoff of 1µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 140 @ 100mA, 5V. This part has a typical lead time of 0 Days from factory. Order 2SC3649S-TD-H from Simplytronix for authenticated stock and same-day order processing.

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