*For representation only.
⚙
Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Power - Max | 625 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
📦
Product Attributes
| Packaging | Ammo Pack |
| Standard Pack Qty | 2000 |
🔁
Alternate / Replacement Parts
| Alternate Packaging | 2N5551BU |
| Suggested Replacement |
5,165
Units In Stock
📦 Ammo Pack
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 210 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
ℹ
Product Overview
onsemi's 2N5551TA is a widely used bipolar transistors - bjt in electronic designs. It features a transistor type of NPN, a current, collector (ic) of 600 mA, a voltage, collector emitter breakdown of 160 V, a vce saturation (max) @ ib, ic of 200mV @ 5mA, 50mA, a current, collector cutoff of 50nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 80 @ 10mA, 5V. This part has a typical lead time of 210 Days from factory. Order 2N5551TA from Simplytronix for authenticated stock and same-day order processing.
