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2N3773G onsemi
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2N3773G

Bipolar Transistors - BJT 16A 140V 150W NPN
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 16 A
Voltage - Collector Emitter Breakdown (Max) 140 V
Vce Saturation (Max) @ Ib, Ic 1.4V @ 800mA, 8A
Current - Collector Cutoff (Max) 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 8A, 4V
Power - Max 150 W
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-204 (TO-3)
📦 Product Attributes
Packaging Tray
Standard Pack Qty 100
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,995
Units In Stock
📦 Tray
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 140 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Manufactured by onsemi, the 2N3773G is classified as a bipolar transistors - bjt. It features a transistor type of NPN, a current, collector (ic) of 16 A, a voltage, collector emitter breakdown of 140 V, a vce saturation (max) @ ib, ic of 1.4V @ 800mA, 8A, a current, collector cutoff of 10mA and a DC current gain (hfe) (min) @ ic, vce of 15 @ 8A, 4V. This part has a typical lead time of 140 Days from factory. You can source 2N3773G through Simplytronix, with fast shipping and verified authenticity.

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