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2N7002PV,115

MOSFETs 2N7002PV/SOT666/SOT6
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 350mA
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power - Max 330mW
Operating Temperature 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-666
Product Attributes
Packaging Reel
Standard Pack Qty4000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,621
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
LifecycleNot Recommended for New Designs
Reported Lead Time 56 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
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