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BSS84AKQBZ Nexperia
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BSS84AKQBZ

Nexperia Active
MOSFETs SOT8015 P-CH 50V .27A
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 10 V
Vgs (Max) +12V, -20V
Input Capacitance (Ciss) (Max) @ Vds 23.2 pF @ 25 V
FET Feature -
Power Dissipation (Max) 420mW (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package DFN1110D-3
Package / Case 3-XDFN Exposed Pad
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,792
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 365 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

BSS84AKQBZ is a mosfets manufactured by Nexperia. This component is defined by a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 50 V, a current, continuous drain (id) @ 25°C of 270mA (Ta), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 7.5Ohm @ 100mA, 10V. This part has a typical lead time of 365 Days from factory. Order BSS84AKQBZ from Simplytronix for authenticated stock and same-day order processing.

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