| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 270mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 10 V |
| Vgs (Max) | +12V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds | 23.2 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 420mW (Ta), 4.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | DFN1110D-3 |
| Package / Case | 3-XDFN Exposed Pad |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 365 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
BSS84AKQBZ is a mosfets manufactured by Nexperia. This component is defined by a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 50 V, a current, continuous drain (id) @ 25°C of 270mA (Ta), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 7.5Ohm @ 100mA, 10V. This part has a typical lead time of 365 Days from factory. Order BSS84AKQBZ from Simplytronix for authenticated stock and same-day order processing.