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2N7002AKQB-QZ

Nexperia Discontinued
MOSFETs 2N7002AKQB-Q/SOT8015/DFN1110D-
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 315 pC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9.2 pF @ 30 V
FET Feature -
Power Dissipation (Max) 490mW (Ta), 6.9W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package DFN1110D-3
Package / Case 3-XDFN Exposed Pad
Product Attributes
Packaging Reel
Standard Pack Qty5000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,235
In Stock
Packaging: Reel
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
LifecycleNew Product
Reported Lead Time 56 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

2N7002AKQB-QZ by Nexperia is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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