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TC8220K6-G Microchip Technology
*For representation only.

TC8220K6-G

MOSFETs 2PR N- & PCH ENHANCE MODE MOSFET
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N and 2 P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs 6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 56pF @ 25V, 75pF @ 25V
Power - Max -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 12-VFDFN Exposed Pad
Supplier Device Package 12-DFN (4x4)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3300
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,969
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 50 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

TC8220K6-G by Microchip Technology is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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