*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 2.6V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 20 V |
| Vgs (Max) | +23V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 1000 V |
| Power Dissipation (Max) | 323W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
8,015
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 98 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by Microchip Technology, the MSC040SMA120B4 is classified as a sic mosfets. Notable characteristics of this part include a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 1200 V, a current, continuous drain (id) @ 25°C of 66A (Tc), a drive voltage of 20V and a rds on (max) @ id, vgs of 50mOhm @ 40A, 20V. This part has a typical lead time of 98 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries MSC040SMA120B4 in stock, backed by a genuine parts guarantee and quick dispatch.
