*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Depletion Mode |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1A, 0V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 7.04nC @ 1.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V |
| Power - Max | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Supplier Device Package | 8-DFN (5x5) |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 490 |
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Alternate / Replacement Parts
| Alternate Packaging | DN2625DK6-G M932 |
| Suggested Replacement |
12,829
Units In Stock
📦 Tray
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- Global shipping
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Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 42 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
The DN2625DK6-G from Microchip Technology falls under the mosfets category. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Depletion Mode, a drain to source voltage of 250V, a current, continuous drain (id) @ 25°C of 1.1A and a rds on (max) @ id, vgs of 3.5Ohm @ 1A, 0V. This part has a typical lead time of 42 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks DN2625DK6-G for same-day shipping with genuine parts guaranteed.
